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Abstract
Research & Development in Material Science
Raman Spectra of GaP Grown from a Non-Stochiometric Ga Melt
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Rainer Thomas*
Im Waldwinkel 8, D-14662 Friesack, Germany
Submission: July 18, 2024;Published: July 30, 2024
ISSN : 2576-8840Volume20 Issue4
Abstract
In this short contribution, we show the Raman spectra of gallium phosphide (GaP) grown from a non-stochiometric Ga melt. For comparison, we also used a GaP wafer with a (100) orientation produced using the Czochralski method. The characteristic first-order and second-order Raman bands of GaP grown from a non-stochiometric Ga melt are presented.
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a Creative Commons Attribution 4.0 International License. Based on a work at www.crimsonpublishers.com.
Best viewed in
| Above IE 9.0 version