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Abstract
Research & Development in Material Science
COP-free Effect Caused by Lowering Cross Point in a Dislocation-Free Ingot Grown by the NOC Method
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Kazuo Nakajima1*, Masami Nakanishi2, Martin Su2 and Chuck Hsu2
1Emeritus Professor, IMR, Tohoku University, Japan
2GlobalWafers Co., Ltd. Hsinchu Science Park, Taiwan
Submission: May 22, 2023;Published: June 02, 2023
ISSN : 2576-8840Volume18 Issue5
Abstract
A dislocation-free ingot was grown by the NOC method. The position of cross point between on centration curves of vacancy and interstitial Si atom was found to be a key factor for NOC growth to largely reduce COP caused by micro-void. Using this ingot, COP distribution was measured and COPs were confirmed not to exist in this wafer with the SC-1 cleaning in a Si ingot.
Keywords:COP; Void; Point defects; Dislocation-free; Diffusion; Single crystal growth; Growth from melt; Low-temperature region; Seed growth; Semiconducting silicon; Fine semiconductor technology
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