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Abstract

Research & Development in Material Science

COP-free Effect Caused by Lowering Cross Point in a Dislocation-Free Ingot Grown by the NOC Method

Submission: May 22, 2023;Published: June 02, 2023

DOI: 10.31031/RDMS.2023.18.000949

ISSN : 2576-8840
Volume18 Issue5

Abstract

A dislocation-free ingot was grown by the NOC method. The position of cross point between on centration curves of vacancy and interstitial Si atom was found to be a key factor for NOC growth to largely reduce COP caused by micro-void. Using this ingot, COP distribution was measured and COPs were confirmed not to exist in this wafer with the SC-1 cleaning in a Si ingot.

Keywords:COP; Void; Point defects; Dislocation-free; Diffusion; Single crystal growth; Growth from melt; Low-temperature region; Seed growth; Semiconducting silicon; Fine semiconductor technology

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