Abstract

Oxide nanowire arrays were studied for piezoelectric applications.Such as ZnO nanowire arrays growth on silicon substrate. The effects of thermal annealing on the optical properties of ZnO nanowires were prepared on sol-gel ZnO-seed-coated substrates. AFM images were found at 130°C well aligned vertically, and the well defined crystallographic planes, providing strong evidence that the nanowire arrays orientate along the c-axis. The annealing temperature of the ZnO thin film plays an important role on the microstructure of the ZnO grains and then the growth of the ZnO nanowire arrays. From PL spectra, an evident ultraviolet near-band edge emission peak at 382nm is observed.From (I-V) characteristic that the material behaves p-n junction diode, ideality factors >>2.0, that was attributed to tunnelling via deep levels in the forbidden gap. Impedance spectra shows the spectrum of the Impedance resistance that the curve does not represent a regular semicircle andthis indicates that the structure of the material is not regulated granules but rather is in a different form which is the nanowires. From Piezoelectric characterization, voltage increase with increase the force applied on Nanowires.

keywords C-axis ZnO nanowires; ZnO seed layer; Sol-Gel;AFM images; PL spectra; (I-V) characteristics; Ideal factor;Impedance spectra;Piezoelectric characterization