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Research & Development in Material Science

Thin Film Production and Characterization Ba1-xSrxTiO3 (x = 0.9) for Capacitor Applications

Submission: January 16, 2019; Published: January 24, 2019

DOI: 10.31031/RDMS.2019.09.000717

ISSN: 2576-8840
Volume9 Issue4


The thin films of Barium Strontium Titanate (BST) material of Ba0.1Sr0.9TiO3 were fabricated using sol-gel method and annealed at temperature 600 °C, 650 °C and 700 °C in order to obtain its crystalline structure. The thin films of BST were characterized using FESEM, XRD and Impedanceof Spectroscopy. The results of characterization use FESEM at temperature of 600 °C, 650 °C and 700 °C to obtainin thickness such as 51,36nm; 53,59nm and 87,09nm. The results of characterization use XRD with the temperature annealing. its angle 10,26° at temperature 600 °C, 650 °C and 700 °C to obtain the intensity 244, 280 and 300. The characterization uses Spectroscopy Impedance to obtain the values complex capacitance and dielectric constant are inversely proportional to the frequency and while the loss of dielectric values areproportional to the frequency. At frequency 100Hz with of the temperature 600 °C, 650 °C and 700 °C obtaining the complex capacitance of values which are 5.59481x10-11F; 7.73048x10-11F and 9.38054x10-11F. The dielectric constant values are 6.3215; 8.7350 and 10.5994. The loss of dielectric values is 0.0234; 0.0069 and 0.0066. The increasing temperature annealing the thickness value, the complex capacitance, the constant of dielectrics and the losses of dielectrics are increasing.

Keywords:Barium strontium titanite; Sol-gel method; XRD; FESEM; Impedance spectroscopy

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