Abstract

Graphene oxide is compound made up of carbon, hydrogen and oxygen molecules and the material (semiconductor or insulator) depend on the degree of oxidation and their electronic properties can be tuned in large scope. The current-voltage (I-V) characteristics of n-Graphene oxide/p-Porous silicon (GO/PS) structures in the normal air and CO atmosphere were investigated. The generation of an open-circuit voltage at CO atmosphere for GO/PS structure at room temperature was observed. The sensitivity of GO/PS structures to CO molecules can be used as CO sensors. The mechanism of generation of electricity in GO/PS structure can be related to chemical interaction of CO composition, couples of water and creation of electrons in H² molecules.

Keywords: Nano-Graphene oxide; Porous silicon; CO gas; Graphene oxide/Porous silicon sensor