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Research & Development in Material Science

Character of Chemıcal Interactıon in Bi2Se3-Tb2Se3 Systems

Zakir Ismailov*, Zivar Hasanova and Rakhila Mirzaeva

Faculty of Chemistry, Department of General and Inorganic Chemistry, Baku State University, Azerbaijan

*Corresponding author:Zakir Ismailov, Faculty of Chemistry, Department of General and Inorganic Chemistry, Baku State University, Baku, Azerbaijan

Submission: April 14, 2025;Published: April 25, 2025

DOI: 10.31031/RDMS.2025.21.001017

ISSN: 2576-8840
Volume 21 Issue 4

Abstract

Chemical interaction in the Bi2Se3-Tb2Se3 system was studied using physicochemical analysis methods (differential thermal analysis, X-ray phase analysis, microstructural analysis, microhardness measurement and density determination).

Based on the analysis results, a phase diagram of the Bi2Se3-Tb2Se3 system was constructed. It was found that the Bi2Se3-Tb2Se3 section is a quasi-binary section of the Tb-Bi-Se ternary system and belongs to the eutectic type.

In the Bi2Se3-based system, a region of solid solution of 8mol. % Tb2Se3 is formed at room temperature. The area of the solid solution was determined by microstructural analysis and is 13mol. % at a eutectic temperature of 813K and 8 mol. % Tb2Se3 at room temperature. It is evident from the phase diagrams that in the Bi2Se3-Tb2Se3 section a new ternary incongruently melting compound of the TbBiSe3 composition is formed by a peritectic reaction at a temperature of 1150K with a component ratio of 1:1.

According to the results of X-ray phase analysis, it was established that the TbBiSe3 compound crystallizes in the orthorhombic syngony with the lattice parameters: a=12.25, b=12.66, c=4.76Å. The solubility of Tb2Se3 in Bi2Se3 is 5.0mol.% at 300K, respectively.

Keywords:System; Analysis; Crystallization; Phase; Diagram; Temperature

Introduction

Modern scientific and technical progress is inextricably linked with the development of semiconductor technology [1-3]. The rapid development of the latter was the main stimulus for the search for complex semiconductor materials [4-6]. However, the growing need for semiconductor technology in materials is not yet fully satisfied due to the lack of materials with different combinations of optical, magnetic and electrophysical properties.

Terbium chalcogenides of the composition Tb2X3(X-Se, Te) and solid solutions based on them are used as thermoelectric materials in the manufacture of n-legs of thermoelectric devices. Chalcogenides of rare earth elements and alloys based on them are promising compounds for the development of thermoelectric materials [7,8]. Therefore, obtaining new materials based on them is an urgent task [9-11].

Experimental Part

For the synthesis of samples, terbium metal ingots TbM-1 purity 99.9%, bismuth grade (B-4) and selenium (B-4) were used. The synthesis mode was selected based on the physicochemical properties of the elementary components, binary compounds. The alloys were obtained by direct fusion of the components in evacuated quartz ampoules at 1600K, followed by slow cooling with the furnace turned off.

Samples with a content of 60mol% Tb2Se3 and higher were obtained as a sinter. They were re-crushed and converted into tablets. Alloys with a content below 60mol% are compact, dark gray in color with a metallic luster.

To achieve homogeneity of the alloy after synthesis, it was additionally annealed at temperatures 50-100K below the solidus for 250g. The obtained samples were subjected to detailed physicochemical study. The heating and cooling curves of the alloys were recorded on a Termoksan, X-ray diffraction was performed on an X-ray diffractometer.

Differential thermal analysis alloys of the system were carried out on a TERMOSKAN-2 device with an accuracy of 3-5°C, a chromelalumel thermocouple, and calcined Al2O3 served as the standard. Heating rate of 9 degrees/min. High-temperature differential thermal analysis was carried out on a device (HTDA) - 8m2 in an inert atmosphere using a B-B/Re thermal suspension, degreasing speed of 5rev/min.

X-ray phase analysis was performed on an X-ray instrument of the D2 PHASER model through the use of CuKα radiation with a Ni filter. The micro-structural analysis of alloys was carried out using an MIM-8 microscope. In the study of alloy microstructure, an etchant of composition 1 N HNO3 + HF = 2:1 was used, the etching time was 20s. The microhardness of the phases was measured on a PMT-3 instrument with an accuracy of 5%, and the density of the samples was determined by the pycnometric method.

Results and Discussion

The amount of selenium was taken in excess to maintain the stoichiometric composition. The thermograms of the alloys show that the observed heating effects are endothermic and reversible. The results of differential thermal analysis are given in Table 1.

Table 1:Results of differential thermal analysis.


Based on the results obtained by the above methods, a phase diagram of the Bi2Se3-Tb2Se3 system was constructed (Figure 1).

Figure 1:Phase diagram of the Bi2Se3-Tb2Se3 system.


As can be seen from the figures, the systems are quasi-binary and eutectic. From the phase diagram of the Bi2Se3-Tb2Se3 system, it is clear that at a ratio of 1:1, peritectic formation of a compound of the TbBiSe3 composition occurs at a temperature of 1150K.

L + Tb2Se3 ↔ TbBiSe3

A solubility region of up to 5mol.% at 300K was found. TbBiSe3 forms a eutectic with Bi2Se3 at 85mol.%. The compound TbBiSe3 with an α-solid solution based on Bi2Se3 forms a eutectic containing 15mol% Tb2Se3, which melts at 1150K. The solubility of Tb2Se3 in Bi2Se3 at 300K is 5mol%.

By indexing the X-ray diffraction patterns of TbBiSe3 powders, it was established that the compound crystallizes in the orthorhombic syngony with the Sb2S3 type structure. The unit cell parameters are a=12.25, b=12.66, c=4.76Å.

Conclusion

1. Based on the results of physicochemical analysis, phase diagrams of the Bi2Se3-Tb2Se3 systems were constructed.
2. It was established that a ternary compound of the composition TbBiSe3 is formed in the Bi2Se3-Tb2Se3 system. The TbBiSe3 compound crystallizes in the orthorhombic syngony of the stibnite type: a=12.25, b=12.66, c=4.76Å.

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© 2025 Zakir Ismailov. This is an open access article distributed under the terms of the Creative Commons Attribution License , which permits unrestricted use, distribution, and build upon your work non-commercially.

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