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Research & Development in Material Science

Bandgap Modulation Based on II-VI Oxides

  • Open or CloseLongxing Su*

    School of Microelectronics, Southern University of Science and Technology, China

    *Corresponding author: Longxing Su, School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China

Submission: January 20, 2022;Published: January 26, 2022

DOI: 10.31031/RDMS.2021.16.000892

ISSN : 2576-8840
Volume16 Issue4


Zinc Oxide (ZnO), as a traditional II-VI semiconductor material with direct wide bandgap of 3.37eV and large exciton binding energy of 60meV, has been regarded as a promising candidate for optoelectronic devices including light emitting diodes (LEDs), lasing diodes (LDs), and ultraviolet (UV) photodetector [1-3]. For realizing such high-performance optoelectronic devices, bandgap engineering is extremely important. High quality multiquantum wells (MQWs) are required within a standard LED structure, in which the bandgap of the barrier layer is widened by alloying BeO (or MgO) with ZnO. For UV photodetectors, ZnO-based ternary or quaternary alloys with adjustable bandgaps are demanded to realize different cut-off response wavelengths. In this case, the tunable bandgap plays a key role as an optical filter, intercepting the incident lights with photon energy smaller than the bandgap of the material. Therefore, bandgap modulation based on II-VI Oxides (ZnO, BeO, and MgO) is urgently required, while some key issues are still beyond challenge.

Keywords: II-IV Oxides; Bandgap modulation; Optoelectronic devices

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