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Research & Development in Material Science

Joule Heating in Two-dimensional Materials Based Transistors

  • Open or CloseFaisal Ahmed1, Bilal Anjum Ahmed1*, Abbas Saeed Hakeem2

    1 Department of Mechanical Engineering, Pakistan

    2 Center of Excellence in Nanotechnology, Saudi Arabia

    *Corresponding author:Bilal Anjum Ahmed, Department of Mechanical Engineering, College of Electrical and Mechanical Engineering, National University of Science and Technology, Islamabad-44000, Pakistan

Submission: April 01, 2019;Published: April 09, 2019

DOI: 10.31031/RDMS.2019.10.000741

ISSN : 2576-8840
Volume10 Issue4


Recently, two-dimensional electronic materials such as graphene, transition metal dichalcogenides and black phosphorus are persuaded as a possible alternative to the conventional silicon based electronic technology due to their exceptional characteristics. Interestingly, the two-dimensional materials exhibit drastically different electrical, mechanical, thermal and physical properties compared to their bulk counterpart materials due to the quantum confinement effect. The two-dimensional materials have been extensively studied under ambient or cryogenic operating conditions in order to explore their intrinsic characteristics and materials’ physics. However, the practical electronic devices are operated under aggressive operating conditions like large electrical and thermal stresses, where heat dissipation and its management become critical. Therefore, in this report we sought to review the progress made towards Joule heating effect and remedies for efficient thermal spreading in functional two-dimensional materials-based transistors.

Keywords:Joule heating; Two-dimensional materials; Graphene; High electric field

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