Abstract

In this paper the p-Si/ textured-Si/ZnS_1-xSe_x heterojunctions were fabricated by electrochemical deposition of ZnS_1-xSe_x (x=0; 0.1 and 0.2) films onto the crystalline p-Si/SK and p-Si/SH substrates (SK and SH are textured silicon etched in KOH+C₃H₈O and HF+HNO3, respectively). Photoelectrical properties of heterojunctions were investigated depending on the etching duration, solution temperature and concentration of solids in solutions (KOH and HF (1-5wt%); C₃H₈O and HNO3 (3-10vol%). It has been established that the efficiency of the p-Si/ textured-Si/ ZnS_1-xSe_x solar cells depends on the etching regime. The optimal concentration of solids (KOH-3wt%+ C₃H₈O-6vol%; HF-5wt%+HNO3-8vol%), solution temperature (80 ˚C) and etching duration (40 min) were determined for maximum efficiency of solar cells: for p-Si/SK4/ZnS-FF=0.58; η=9.36%; for p-Si/SH4/ZnS-FF=0.5; η=7.1%; for p-Si/SK4/ ZnS_0.9Se_0.1- (Jsc -34mA/cm2, Voc - 0, 620V) FF -0,65; η=10.6% and for p-Si/SH4/ZnS_0.9Se_0.1- FF=0.56; η=9.1%.