Abstract

Silicon-On-Insulator (SOI), considered the technology of the ‘future’ for a long time, is currently regarded as the most attractive candidate for low voltage circuits. Considerable progress in developing techniques for growing single-crystal SOI substrates suitable for fabricating high-performance devices has been foreseen. In this last decade, SOI MOSFET technology has shown its potential for high-frequency commercial applications, including K/Metal gate, Large-Scale Integration (VLSI), memory, analog and digital integrated circuits, and mixed signals. The SOI technology enables scaling to substrate 22nm gate thickness, superior leakage current control, and elimination of bipolar latch up. Moreover, transition to the SOI is essential to meet the performance and scaling. This paper reviews the SOI technology with MOSFET devices and the various technological approaches, interests, limitations and future of SOI-MOS (Metal Oxide Semiconductor) and FinFET technology.

Keywords:SOI technology; Moore’s law; MOSFET scaling; CMOS technology; FinFET technology; High-K/ Metal