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Abstract

Research in Pediatrics & Neonatology

Variation of Band Gap in Graphene Grown by Plasma Enhanced Chemical Vapor Deposition

  • Open or CloseChang-Soo Park1 and Heetae Kim2*

    1Department of Physics, Sejong University, Seoul 05006, Korea

    2Rare Isotope Science Project, Institute for Basic Science, Daejeon 34047, Korea

    *Corresponding author:Kim H, Rare Isotope Science Project, Institute for Basic Science, Daejeon 34047, Korea

Submission: March 11, 2020Published: March 16, 2020

ISSN : 2688-8394
Volume2 Issue1

DOI: 10.31031/ACSR.2020.02.000529

Abstract

We report the transport behavior of graphene grown by plasma enhanced chemical vapor deposition (PECVD). The graphene films were grown at 950 °C for 5, 10, 30 and 60min, respectively. Raman spectra showed that the synthesized films are bilayer with strong defect peaks. The temperature dependent conductivity of graphene films showed the band gap modulation with increasing growth times. Thermally activated (TA) conduction model showed that the values of band gap of graphene films are 95, 73, 48 and 36meV for 5, 10, 30 and 60min growth times, respectively

Keywords: Graphene; Raman; Band gap; PECVD; Defect

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