Crimson Publishers Publish With Us Reprints e-Books Video articles

Abstract

Psychology and Psychotherapy: Research Study

Role of Nanostructured Defects through Swift Heavy Ion Irradiation for Resistive Switching of Manganite Thin Film Devices: A Short Review

Submission: September 17, 2019;Published: October 15, 2019

Abstract

Recently, memory devices based on resistive switching (RS) have attracted enormous attention of researchers due to their fast switching speed, cost effective fabrication, great endurance and retention behaviors, small power consumption, simple structure and Complementary Metal Oxide Semiconductor (CMOS) compatibility. Amid various materials, manganite’s are known to possess both the elemental RS types, i.e. unipolar and bipolar switching. Formation of defects, induced by Swift Heavy Ion (SHI) irradiation, can influence the resistive state (i.e. RS) of the manganite devices through nanostructuring. In short, nanostructuring for manganite thin films through SHI irradiation offers the improvement in their RS behaviors.

Keywords: Nanostructuring; Resistive switching; SHI irradiation

Get access to the full text of this article


About Crimson

We at Crimson Publishing are a group of people with a combined passion for science and research, who wants to bring to the world a unified platform where all scientific know-how is available read more...

Leave a comment

Contact Info

  • Crimson Publishers, LLC
  • 555 Madison Avenue, 5th floor
  •     New York, NY 10022, USA
  • +1 (929) 600-8049
  • +1 (929) 447-1137
  • info@crimsonpublishers.com
  • www.crimsonpublishers.com