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Abstract
Aspects in Mining & Mineral Science
Influence of Technological Modes of Obtaining of Silicon Wafers on their Electro Physical Properties
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Open or CloseAliev R* and Mukhtarov E
Andijan State University, Uzbekistan
*Corresponding author: Aliev Rayimjon, Andijan State University, Andijan, Uzbekistan
Submission: March 18, 2024; Published: April 16, 2024
ISSN : 2578-0255Volume12 Issue3
Abstract
In work process of pressing of powder silicon is considered. By experimental way dependence of relative density on pressure of pressing a fine-grained powder and a coarse-grained powder are defined. Temperature dependence of consolidation at sintering of powders Ni, WC, ZnC, AlNi and Si is shown. Dependence of specific resistance of the poly-Si wafers and factor of self-diffusion on heat treatment temperature. Quantitative results of the analysis of a chemical compound of a surface of grains and micro pictures of two kinds of the poly-Si are resulted.
Keywords:Powder silicon; Polycrystalline; Pressing; Solar cells; Sintering; Substrate
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